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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 Volts (Typ) @ IF = 10 mAdc
1 Cathode 2 Anode
BAT54T1
Motorola Preferred Device
30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE
2 1
CASE 425 - 04, STYLE 1 SOD - 123
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating Reverse Voltage Forward Power Dissipation, FR-5 Board(1) @ TA = 25C Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Forward Current (DC) Non-Repetitive Peak Forward Current tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% Junction Temperature Storage Temperature Range Symbol VR PF 400 3.2 RJL RJA IF IFSM IFRM TJ Tstg 174 492 200 Max 600 300 125 Max - 55 to +150 mW mW/C C/W C/W mA mA mA C C Value 30 Unit Volts
DEVICE MARKING
BAT54T1 = BU 1. FR-5 = 1.0 x 0.75 x 0.062 in.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
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Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997
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BAT54T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (t < 1.0 s) Symbol V(BR)R CT IR VF VF VF trr VF VF IF IFRM IFSM Min 30 -- -- -- -- -- -- -- -- -- -- -- Typ -- 7.6 0.5 0.22 0.41 0.52 -- 0.29 0.35 -- -- -- Max -- 10 2.0 0.24 0.5 1.0 5.0 0.32 0.40 200 300 600 Unit Volts pF Adc Vdc Vdc Vdc ns Vdc Vdc mAdc mAdc mAdc
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
BAT54T1
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
100 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 1000 TA = 150C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0 5 VF, FORWARD VOLTAGE (VOLTS) 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 30
10
1 50C
1 25C 1.0 85C 25C - 40C - 55C
0.1 0.0
Figure 2. Forward Voltage
Figure 3. Leakage Current
14 C T , TOTAL CAPACITANCE (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
Motorola Small-Signal Transistors, FETs and Diodes Device Data
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BAT54T1
INFORMATION FOR USING THE SOD-123 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
SOD-123
0.91 0.036
2.36 0.093 4.19 0.165
SOD-123 POWER DISSIPATION
The power dissipation of the SOD-123 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOD-123 package, PD can be calculated as follows: PD = TJ(max) - TA RJA
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOD-123 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOD-123 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
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1.22 0.048
mm inches
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
BAT54T1
PACKAGE DIMENSIONS
A
C H
1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.004 --- 0.000 0.004 --- 0.006 0.140 0.152 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 --- 0.00 0.10 --- 0.15 3.55 3.85
K
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
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B
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STYLE 1: PIN 1. CATHODE 2. ANODE
D
CASE 425-04 ISSUE C
BAT54T1/D 5

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